1.47-1.49-μm InGaAsP/InP diode laser arrays

A. Gourevitch; G. Belenky; D. Donetsky; B. Laikhtman; D. Westerfeld; C. W. Trussell; H. An; Z. Shellenbarger; R. Martinelli

doi:10.1063/1.1596379

1.47-1.49-μm InGaAsP/InP diode laser arrays

A. Gourevitch^*, G. Belenky, D. Donetsky, B. Laikhtman, D. Westerfeld, C. W. Trussell, H. An, Z. Shellenbarger, R. Martinelli

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

Original language	English
Pages (from-to)	617-619
Number of pages	3
Journal	Applied Physics Letters
Volume	83
Issue number	4
DOIs	https://doi.org/10.1063/1.1596379
State	Published - 28 Jul 2003

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@article{7c3d2bcb93fb44c6854698f51710455a,

title = "1.47-1.49-μm InGaAsP/InP diode laser arrays",

abstract = "The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.",

author = "A. Gourevitch and G. Belenky and D. Donetsky and B. Laikhtman and D. Westerfeld and Trussell, {C. W.} and H. An and Z. Shellenbarger and R. Martinelli",

year = "2003",

month = jul,

day = "28",

doi = "10.1063/1.1596379",

language = "אנגלית",

volume = "83",

pages = "617--619",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "4",

}

TY - JOUR

T1 - 1.47-1.49-μm InGaAsP/InP diode laser arrays

AU - Gourevitch, A.

AU - Belenky, G.

AU - Donetsky, D.

AU - Laikhtman, B.

AU - Westerfeld, D.

AU - Trussell, C. W.

AU - An, H.

AU - Shellenbarger, Z.

AU - Martinelli, R.

PY - 2003/7/28

Y1 - 2003/7/28

N2 - The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

AB - The 1.47-1.49-μm InGaAs/InP diode laser arrays were investigated. Continuous-wave power of 25 W at 1.47-μm was obtained from a 20-element, 1-cm-wide, one-dimensional diode laser array mounted in a microchannel water-cooled heat sink. Thermal resistances of 0.56, 0.4 and 0.34 K/W were determined for arrays with fill factors of 10%, 20% and 40% respectively.

UR - http://www.scopus.com/inward/record.url?scp=0042013063&partnerID=8YFLogxK

U2 - 10.1063/1.1596379

DO - 10.1063/1.1596379

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0042013063

SN - 0003-6951

VL - 83

SP - 617

EP - 619

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 4

ER -

1.47-1.49-μm InGaAsP/InP diode laser arrays

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