Abstract
The magnitude of the 1/f noise in indium oxide films and ZnO accumulation layers is studied as a function of static disorder. The noise level, of both systems, is much higher than in typical metals even for the diffusive regime. The correlation between noise and static disorder leads us to suggest tht incipient localization may play an important role in determining the noise characteristics of diffusive systems near an Anderson transition.
| Original language | English |
|---|---|
| Pages (from-to) | 3555-3558 |
| Number of pages | 4 |
| Journal | Physical Review Letters |
| Volume | 69 |
| Issue number | 24 |
| DOIs | |
| State | Published - 1992 |