A 16K×1b static RAM

R. Pashley, W. Owen, J. Owen, J. Shappir, R. Smith, S. Liu, R. Jecmen

Research output: Contribution to journalConference articlepeer-review

14 Scopus citations

Abstract

This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.

Original languageEnglish
Article number1156012
Pages (from-to)106-107 and 287
JournalDigest of Technical Papers - IEEE International Solid-State Circuits Conference
DOIs
StatePublished - 1979
Externally publishedYes
Event26th IEEE International Solid-State Circuits Conference, ISSCC 1979 - Philadelphia, United States
Duration: 14 Feb 197916 Feb 1979

Bibliographical note

Publisher Copyright:
© 1979 IEEE.

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