Abstract
This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.
Original language | English |
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Article number | 1156012 |
Pages (from-to) | 106-107 and 287 |
Journal | Digest of Technical Papers - IEEE International Solid-State Circuits Conference |
DOIs | |
State | Published - 1979 |
Externally published | Yes |
Event | 26th IEEE International Solid-State Circuits Conference, ISSCC 1979 - Philadelphia, United States Duration: 14 Feb 1979 → 16 Feb 1979 |
Bibliographical note
Publisher Copyright:© 1979 IEEE.