A 16K×1b static RAM

R. Pashley; W. Owen; J. Owen; J. Shappir; R. Smith; S. Liu; R. Jecmen

doi:10.1109/ISSCC.1979.1156012

A 16K×1b static RAM

R. Pashley
, W. Owen
, J. Owen
, J. Shappir
, R. Smith
, S. Liu
, R. Jecmen

Research output: Contribution to journal › Conference article › peer-review

14 Scopus citations

Abstract

This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.

Original language	English
Article number	1156012
Pages (from-to)	106-107 and 287
Journal	Digest of Technical Papers - IEEE International Solid-State Circuits Conference
DOIs	https://doi.org/10.1109/ISSCC.1979.1156012
State	Published - 1979
Externally published	Yes
Event	26th IEEE International Solid-State Circuits Conference, ISSCC 1979 - Philadelphia, United States Duration: 14 Feb 1979 → 16 Feb 1979

Bibliographical note

Publisher Copyright:
© 1979 IEEE.

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10.1109/ISSCC.1979.1156012

Cite this

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title = "A 16K×1b static RAM",

abstract = "This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.",

author = "R. Pashley and W. Owen and J. Owen and J. Shappir and R. Smith and S. Liu and R. Jecmen",

note = "Publisher Copyright: {\textcopyright} 1979 IEEE.; 26th IEEE International Solid-State Circuits Conference, ISSCC 1979 ; Conference date: 14-02-1979 Through 16-02-1979",

year = "1979",

doi = "10.1109/ISSCC.1979.1156012",

language = "אנגלית",

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journal = "Digest of Technical Papers - IEEE International Solid-State Circuits Conference",

issn = "0193-6530",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

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AU - Pashley, R.

AU - Owen, W.

AU - Owen, J.

AU - Shappir, J.

AU - Smith, R.

AU - Liu, S.

AU - Jecmen, R.

PY - 1979

Y1 - 1979

N2 - This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.

AB - This paper will report on the application of double poly MOS technology to a 5V 16K×1b static RAM. Typical access time and power dissipation is 45ns and 550mW, respectively.

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JO - Digest of Technical Papers - IEEE International Solid-State Circuits Conference

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M1 - 1156012

T2 - 26th IEEE International Solid-State Circuits Conference, ISSCC 1979

Y2 - 14 February 1979 through 16 February 1979

ER -

A 16K×1b static RAM

Abstract

Bibliographical note

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