A chiral-based magnetic memory device without a permanent magnet

Oren Ben Dor, Shira Yochelis, Shinto P. Mathew, Ron Naaman, Yossi Paltiel*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

157 Scopus citations

Abstract

Several technologies are currently in use for computer memory devices. However, there is a need for a universal memory device that has high density, high speed and low power requirements. To this end, various types of magnetic-based technologies with a permanent magnet have been proposed. Recent charge-transfer studies indicate that chiral molecules act as an efficient spin filter. Here we utilize this effect to achieve a proof of concept for a new type of chiral-based magnetic-based Si-compatible universal memory device without a permanent magnet. More specifically, we use spin-selective charge transfer through a self-assembled monolayer of polyalanine to magnetize a Ni layer. This magnitude of magnetization corresponds to applying an external magnetic field of 0.4 T to the Ni layer. The readout is achieved using low currents. The presented technology has the potential to overcome the limitations of other magnetic-based memory technologies to allow fabricating inexpensive, high-density universal memory-on-chip devices.

Original languageAmerican English
Article number2256
JournalNature Communications
Volume4
DOIs
StatePublished - 2013

Bibliographical note

Funding Information:
Y.P. acknowledge the Yessumit internal grant from the Hebrew University. We thank the Center of Nanoscience and Nanotechnology for helping with device fabrication and advice. R.N. and S.P.M. acknowledge the support of the Minerva Foundation.

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