TY - GEN
T1 - A decrease in the damage threshold in dielectric materials induced by negatively chirped laser pulses
AU - Louzon, E. H.
AU - Ehrlich, Y.
AU - Fraenkel, M.
AU - Fisher, D.
AU - Pecker, S.
AU - Henis, Z.
AU - Zigler, A.
PY - 2006
Y1 - 2006
N2 - The threshold fluence for laser induced damage in wide band gap dielectric materials, such as fused silica and MgF2, is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors, such as silicon and GaAs. Based on a model describing electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the role of multiphoton ionization in wide gap materials.
AB - The threshold fluence for laser induced damage in wide band gap dielectric materials, such as fused silica and MgF2, is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors, such as silicon and GaAs. Based on a model describing electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the role of multiphoton ionization in wide gap materials.
UR - http://www.scopus.com/inward/record.url?scp=33747345002&partnerID=8YFLogxK
U2 - 10.1117/12.667787
DO - 10.1117/12.667787
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AN - SCOPUS:33747345002
SN - 0819463264
SN - 9780819463265
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - High-Power Laser Ablation VI
T2 - High-Power Laser Ablation VI
Y2 - 7 May 2006 through 12 May 2006
ER -