A decrease in the damage threshold in dielectric materials induced by negatively chirped laser pulses

E. H. Louzon*, Y. Ehrlich, M. Fraenkel, D. Fisher, S. Pecker, Z. Henis, A. Zigler

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

1 Scopus citations

Abstract

The threshold fluence for laser induced damage in wide band gap dielectric materials, such as fused silica and MgF2, is observed to be lower by up to 20% for negatively (down) chirped pulses than for positively (up) chirped, at pulse durations ranging from 60 fs to 1 ps. This behavior of the threshold fluence for damage on the chirp direction was not observed in semiconductors, such as silicon and GaAs. Based on a model describing electron generation in the conduction band and Joule heating, it is suggested that the decrease in the damage threshold for negatively chirped pulse is related to the role of multiphoton ionization in wide gap materials.

Original languageEnglish
Title of host publicationHigh-Power Laser Ablation VI
DOIs
StatePublished - 2006
EventHigh-Power Laser Ablation VI - Taos, NM, United States
Duration: 7 May 200612 May 2006

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6261 II
ISSN (Print)0277-786X

Conference

ConferenceHigh-Power Laser Ablation VI
Country/TerritoryUnited States
CityTaos, NM
Period7/05/0612/05/06

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