TY - JOUR
T1 - A model for silicon-oxide breakdown under high field and current stress
AU - Avni, E.
AU - Shappir, J.
PY - 1988
Y1 - 1988
N2 - A recently developed self-consistent model for gate-oxide degradation due to charge injection, described in a companion paper, is expanded to include electrical wear out" breakdown. In the present work, gate-oxide breakdown is defined to occur when the density of generated neutral trapping sites reaches a critical threshold value at the anode. Breakdown experimental results obtained under constant tunneling current are treated and simulated. The new model deals successfully with oxide breakdown dependence on: injection history, gate-oxide thickness, charge-injection current density, injection polarity reversal, gate electrode material, and oxide anneal temperatures.
AB - A recently developed self-consistent model for gate-oxide degradation due to charge injection, described in a companion paper, is expanded to include electrical wear out" breakdown. In the present work, gate-oxide breakdown is defined to occur when the density of generated neutral trapping sites reaches a critical threshold value at the anode. Breakdown experimental results obtained under constant tunneling current are treated and simulated. The new model deals successfully with oxide breakdown dependence on: injection history, gate-oxide thickness, charge-injection current density, injection polarity reversal, gate electrode material, and oxide anneal temperatures.
UR - http://www.scopus.com/inward/record.url?scp=36549090991&partnerID=8YFLogxK
U2 - 10.1063/1.342477
DO - 10.1063/1.342477
M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???
AN - SCOPUS:36549090991
SN - 0021-8979
VL - 64
SP - 743
EP - 748
JO - Journal of Applied Physics
JF - Journal of Applied Physics
IS - 2
ER -