A model for silicon-oxide breakdown under high field and current stress

E. Avni*, J. Shappir

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

50 Scopus citations

Abstract

A recently developed self-consistent model for gate-oxide degradation due to charge injection, described in a companion paper, is expanded to include electrical wear out" breakdown. In the present work, gate-oxide breakdown is defined to occur when the density of generated neutral trapping sites reaches a critical threshold value at the anode. Breakdown experimental results obtained under constant tunneling current are treated and simulated. The new model deals successfully with oxide breakdown dependence on: injection history, gate-oxide thickness, charge-injection current density, injection polarity reversal, gate electrode material, and oxide anneal temperatures.

Original languageEnglish
Pages (from-to)743-748
Number of pages6
JournalJournal of Applied Physics
Volume64
Issue number2
DOIs
StatePublished - 1988

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