A new approach to modelling Kelvin probe force microscopy of hetero-structures in the dark and under illumination

Yong Huang*, Alexandre Gheno, Alain Rolland, Laurent Pedesseau, Sylvain Vedraine, Olivier Durand, Johann Bouclé, James P. Connolly, Lioz Etgar, Jacky Even

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

6 Scopus citations

Abstract

A numerical method is proposed to model Kelvin probe force microscopy of hetero-structures in the dark and under illumination. It is applied to FTO/TiO2 and FTO/TiO2/MAPbI3 structures. The presence of surface states on the top of the TiO2 layers are revealed by combining theoretical computation and experimental results. Basic features of Kelvin probe force microscopy under illumination, namely surface photovoltage, are simulated as well. The method paves the way toward further investigations of more complicated optoelectronic devices.

Original languageAmerican English
Article number41
JournalOptical and Quantum Electronics
Volume50
Issue number1
DOIs
StatePublished - 1 Jan 2018

Bibliographical note

Publisher Copyright:
© 2018, Springer Science+Business Media, LLC, part of Springer Nature.

Keywords

  • Drift–diffusion
  • Halide perovskite
  • Hetero-structures
  • KPFM
  • SPV

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