Abstract
A semiconducting layer, placed on an insulating substrate which contains paramagnetic impurities, distorts the electron paramagnetic resonance (EPR) lineshape of the impurities. This distortion can be used to monitor the conductivity of the semiconducting layer. The method is demonstrated on p-type InSb crystals on a ruby (Al2O3:Cr3+) substrate. The results are in good agreement with independent direct resistivity measurement.
Original language | English |
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Pages (from-to) | 553-555 |
Number of pages | 3 |
Journal | Solid State Communications |
Volume | 66 |
Issue number | 5 |
DOIs | |
State | Published - May 1988 |