A study of the electronic structure of a-Si:H by tunneling

I. Balberg

doi:10.1016/0022-3093(80)90661-4

A study of the electronic structure of a-Si:H by tunneling

I. Balberg^*

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Measurements of the tunneling and phototunneling I-V and G-V characteristics have enabled the study of the distribution of states in the band-gap of hydrogenated amorpous silicon. It is found that regardless of the method of preparation and the material dopants there is a peak in the bulk and surface density of states which lies 0.45 eV below the conduction band edge. The density of states at the peak is concluded to be 10¹⁸ - 10¹⁹ cm^-3 eV^-1, decreasing by at least an order of magnitude for energies below and above this peak.

Original language	English
Pages (from-to)	605-610
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	35-36
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(80)90661-4
State	Published - 1980
Externally published	Yes

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10.1016/0022-3093(80)90661-4

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title = "A study of the electronic structure of a-Si:H by tunneling",

abstract = "Measurements of the tunneling and phototunneling I-V and G-V characteristics have enabled the study of the distribution of states in the band-gap of hydrogenated amorpous silicon. It is found that regardless of the method of preparation and the material dopants there is a peak in the bulk and surface density of states which lies 0.45 eV below the conduction band edge. The density of states at the peak is concluded to be 1018 - 1019 cm-3 eV-1, decreasing by at least an order of magnitude for energies below and above this peak.",

author = "I. Balberg",

year = "1980",

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PY - 1980

Y1 - 1980

N2 - Measurements of the tunneling and phototunneling I-V and G-V characteristics have enabled the study of the distribution of states in the band-gap of hydrogenated amorpous silicon. It is found that regardless of the method of preparation and the material dopants there is a peak in the bulk and surface density of states which lies 0.45 eV below the conduction band edge. The density of states at the peak is concluded to be 1018 - 1019 cm-3 eV-1, decreasing by at least an order of magnitude for energies below and above this peak.

AB - Measurements of the tunneling and phototunneling I-V and G-V characteristics have enabled the study of the distribution of states in the band-gap of hydrogenated amorpous silicon. It is found that regardless of the method of preparation and the material dopants there is a peak in the bulk and surface density of states which lies 0.45 eV below the conduction band edge. The density of states at the peak is concluded to be 1018 - 1019 cm-3 eV-1, decreasing by at least an order of magnitude for energies below and above this peak.

UR - https://www.scopus.com/pages/publications/0018335557

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AN - SCOPUS:0018335557

SN - 0022-3093

VL - 35-36

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EP - 610

JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

A study of the electronic structure of a-Si:H by tunneling

Abstract

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