Absorption of ac fields in amorphous indium-oxide films

Z. Ovadyahu*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionpeer-review

Abstract

Absorption data from applied ac fields in Anderson-localized amorphous indium-oxide (InxO) films are shown to be frequency and disorder dependent. The absorption shows a roll-off at a frequency which is much lower than the electron-electron scattering rate of the material when it is in the diffusive regime. This is interpreted as evidence for discreteness of the energy spectrum of the deeply localized regime. This is consistent with recent many-body localization scenarios. As the metal-insulator transition is approached, the absorption shifts to higher frequencies. Comparing with the previously obtained results on the crystalline version of indium-oxide (In 2O3-x) implies a considerably higher inelastic electron-phonon scattering rate in the amorphous material. The range over which the absorption versus frequency decreases may indicate that a wide distribution of localization length is a common feature in these systems.

Original languageEnglish
Title of host publication15th International Conference on Transport in Interacting Disordered Systems, TIDS 2013
PublisherAmerican Institute of Physics Inc.
Pages3-10
Number of pages8
ISBN (Print)9780735412460
DOIs
StatePublished - 2014
Event15th International Conference on Transport in Interacting Disordered Systems, TIDS 2013 - Sant Feliu de Guixols, Spain
Duration: 1 Sep 20135 Sep 2013

Publication series

NameAIP Conference Proceedings
Volume1610
ISSN (Print)0094-243X
ISSN (Electronic)1551-7616

Conference

Conference15th International Conference on Transport in Interacting Disordered Systems, TIDS 2013
Country/TerritorySpain
CitySant Feliu de Guixols
Period1/09/135/09/13

Keywords

  • Anderson Insulators
  • Electron-Glass
  • Hopping conductivity

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