TY - JOUR
T1 - Acceptor levels of high degeneracy in ZnO derived from combined space charge capacitance and hall effect data
AU - Trokman, S.
AU - Many, A.
AU - Goldstein, Y.
AU - Heiland, G.
AU - Kohl, D.
AU - Moormann, H.
PY - 1981
Y1 - 1981
N2 - The trap distribution in the bulk of ZnO crystals is studied by combined measurements of space-charge capacitance at the electrolyte/ZnO interface and of conductivity and Hall effect. The former yield the density and effective energy of the dominant acceptor levels, while the latter determine their actual energy position. The two types of data enable a rather accurate determination of the degeneracy factor of the acceptors in the samples studied (6 ± 1), information that is very difficult to gain by any other means.
AB - The trap distribution in the bulk of ZnO crystals is studied by combined measurements of space-charge capacitance at the electrolyte/ZnO interface and of conductivity and Hall effect. The former yield the density and effective energy of the dominant acceptor levels, while the latter determine their actual energy position. The two types of data enable a rather accurate determination of the degeneracy factor of the acceptors in the samples studied (6 ± 1), information that is very difficult to gain by any other means.
UR - http://www.scopus.com/inward/record.url?scp=0019714108&partnerID=8YFLogxK
U2 - 10.1016/0022-3697(81)90021-4
DO - 10.1016/0022-3697(81)90021-4
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AN - SCOPUS:0019714108
SN - 0022-3697
VL - 42
SP - 937
EP - 942
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 10
ER -