ALLOYING EFFECTS ON THE OPTICAL ABSORPTION EDGE AND PHOTOCONDUCTANCE OF RF SPUTTERED a-Sn//xSi//1// minus //x:H FILMS.

R. Perez; O. Resto; S. Z. Weisz; Y. Goldstein

ALLOYING EFFECTS ON THE OPTICAL ABSORPTION EDGE AND PHOTOCONDUCTANCE OF RF SPUTTERED a-Sn//xSi//1// minus //x:H FILMS.

R. Perez^*, O. Resto, S. Z. Weisz, Y. Goldstein

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

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Abstract

Hydrogenated amorphous Sn-Si alloy films were prepared by reactive co-sputtering at 220 and at 110 degree C. The tin content of the films varied between 0. 3 and 4. 7 at. %. The optical absorption and photoconductivity were measured as a function of wavelength and film composition. The energy gap, as evaluated from these measurements, decreases with increasing tin content, more strongly for samples prepared at the lower temperature. The photoconductance response varies strongly, by about three orders of magnitude, as the Sn concentration increases to 4. 7 at. % and is quite different for the two kind of samples.

Original language	English
Pages (from-to)	291-300
Number of pages	10
Journal	Applied physics communications
Volume	7
Issue number	4
State	Published - Dec 1987
Externally published	Yes

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@article{dd1d266e6b9e4f0fa85c9ef65395c96c,

title = "ALLOYING EFFECTS ON THE OPTICAL ABSORPTION EDGE AND PHOTOCONDUCTANCE OF RF SPUTTERED a-Sn//xSi//1// minus //x:H FILMS.",

abstract = "Hydrogenated amorphous Sn-Si alloy films were prepared by reactive co-sputtering at 220 and at 110 degree C. The tin content of the films varied between 0. 3 and 4. 7 at. %. The optical absorption and photoconductivity were measured as a function of wavelength and film composition. The energy gap, as evaluated from these measurements, decreases with increasing tin content, more strongly for samples prepared at the lower temperature. The photoconductance response varies strongly, by about three orders of magnitude, as the Sn concentration increases to 4. 7 at. % and is quite different for the two kind of samples.",

author = "R. Perez and O. Resto and Weisz, {S. Z.} and Y. Goldstein",

year = "1987",

month = dec,

language = "אנגלית",

volume = "7",

pages = "291--300",

journal = "Applied physics communications",

issn = "0277-9374",

number = "4",

}

TY - JOUR

T1 - ALLOYING EFFECTS ON THE OPTICAL ABSORPTION EDGE AND PHOTOCONDUCTANCE OF RF SPUTTERED a-Sn//xSi//1// minus //x:H FILMS.

AU - Perez, R.

AU - Resto, O.

AU - Weisz, S. Z.

AU - Goldstein, Y.

PY - 1987/12

Y1 - 1987/12

N2 - Hydrogenated amorphous Sn-Si alloy films were prepared by reactive co-sputtering at 220 and at 110 degree C. The tin content of the films varied between 0. 3 and 4. 7 at. %. The optical absorption and photoconductivity were measured as a function of wavelength and film composition. The energy gap, as evaluated from these measurements, decreases with increasing tin content, more strongly for samples prepared at the lower temperature. The photoconductance response varies strongly, by about three orders of magnitude, as the Sn concentration increases to 4. 7 at. % and is quite different for the two kind of samples.

AB - Hydrogenated amorphous Sn-Si alloy films were prepared by reactive co-sputtering at 220 and at 110 degree C. The tin content of the films varied between 0. 3 and 4. 7 at. %. The optical absorption and photoconductivity were measured as a function of wavelength and film composition. The energy gap, as evaluated from these measurements, decreases with increasing tin content, more strongly for samples prepared at the lower temperature. The photoconductance response varies strongly, by about three orders of magnitude, as the Sn concentration increases to 4. 7 at. % and is quite different for the two kind of samples.

UR - http://www.scopus.com/inward/record.url?scp=0023530812&partnerID=8YFLogxK

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0023530812

SN - 0277-9374

VL - 7

SP - 291

EP - 300

JO - Applied physics communications

JF - Applied physics communications

IS - 4

ER -

ALLOYING EFFECTS ON THE OPTICAL ABSORPTION EDGE AND PHOTOCONDUCTANCE OF RF SPUTTERED a-Sn//xSi//1// minus //x:H FILMS.

Abstract

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