Analysis of the orientational effects on infrared absorption spectra in p-type semiconductor quantum wells

G. Shechter; L. D. Shvartsman; J. E. Golub

doi:10.1006/spmi.1996.0042

Analysis of the orientational effects on infrared absorption spectra in p-type semiconductor quantum wells

G. Shechter^*, L. D. Shvartsman, J. E. Golub

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

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Abstract

We theoretically investigate the effects of layer orientation on valence subband optical absorption in cubic semiconductors. We analyze the polarization dependence of matrix elements for hole subband transitions at zero in-plane momentum, and make predictions concerning infrared absorption spectrum. The role of orientation as a key parameter in valence subband spectroscopy is clarified. The absorption spectra for 〈011〉 layer orientation is calculated, demonstrating the in-plane optical anisotropy.

Original language	English
Pages (from-to)	383-392
Number of pages	10
Journal	Superlattices and Microstructures
Volume	19
Issue number	4
DOIs	https://doi.org/10.1006/spmi.1996.0042
State	Published - Jun 1996

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abstract = "We theoretically investigate the effects of layer orientation on valence subband optical absorption in cubic semiconductors. We analyze the polarization dependence of matrix elements for hole subband transitions at zero in-plane momentum, and make predictions concerning infrared absorption spectrum. The role of orientation as a key parameter in valence subband spectroscopy is clarified. The absorption spectra for 〈011〉 layer orientation is calculated, demonstrating the in-plane optical anisotropy.",

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year = "1996",

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AU - Golub, J. E.

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N2 - We theoretically investigate the effects of layer orientation on valence subband optical absorption in cubic semiconductors. We analyze the polarization dependence of matrix elements for hole subband transitions at zero in-plane momentum, and make predictions concerning infrared absorption spectrum. The role of orientation as a key parameter in valence subband spectroscopy is clarified. The absorption spectra for 〈011〉 layer orientation is calculated, demonstrating the in-plane optical anisotropy.

AB - We theoretically investigate the effects of layer orientation on valence subband optical absorption in cubic semiconductors. We analyze the polarization dependence of matrix elements for hole subband transitions at zero in-plane momentum, and make predictions concerning infrared absorption spectrum. The role of orientation as a key parameter in valence subband spectroscopy is clarified. The absorption spectra for 〈011〉 layer orientation is calculated, demonstrating the in-plane optical anisotropy.

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Analysis of the orientational effects on infrared absorption spectra in p-type semiconductor quantum wells

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