Abstract
Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity.
Original language | English |
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Pages (from-to) | 6552-6554 |
Number of pages | 3 |
Journal | Physical Review B |
Volume | 33 |
Issue number | 9 |
DOIs | |
State | Published - 1986 |
Externally published | Yes |