Anisotropic magnetoresistance in a Fermi glass

Z. Ovadyahu*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

45 Scopus citations

Abstract

Insulating thin films of indium oxide exhibit negative, anisotropic magnetoresistance. The systematics of these results imply that the magnetoresistance mechanism may give different weight to the distribution of the localization lengths than that given by the hopping conductivity.

Original languageEnglish
Pages (from-to)6552-6554
Number of pages3
JournalPhysical Review B
Volume33
Issue number9
DOIs
StatePublished - 1986
Externally publishedYes

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