Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO2

I. V. Antonova; D. V. Marin; V. A. Volodin; V. A. Skuratov; J. Jedrzejewski; I. Balberg

doi:10.4028/www.scientific.net/SSP.156-158.523

Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO₂

I. V. Antonova, D. V. Marin, V. A. Volodin, V. A. Skuratov, J. Jedrzejewski, I. Balberg

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

3 Scopus citations

Abstract

In the present paper we discuss effects due to high-energy ion bombardment of SiO₂ layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain-anisotropic heating in NCs-SiO₂ layers under ion irradiation.

Original language	English
Title of host publication	Gettering and Defect Engineering in Semiconductor Technology XIII
Subtitle of host publication	GADEST 2009
Publisher	Trans Tech Publications Ltd
Pages	523-528
Number of pages	6
ISBN (Print)	3908451744, 9783908451747
DOIs	https://doi.org/10.4028/www.scientific.net/SSP.156-158.523
State	Published - 2009
Event	13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 - Berlin, Germany Duration: 26 Sep 2009 → 2 Oct 2009

Publication series

Name	Solid State Phenomena
Volume	156-158
ISSN (Print)	1012-0394

Conference

Conference	13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009
Country/Territory	Germany
City	Berlin
Period	26/09/09 → 2/10/09

Keywords

Anisotropic heating
Anisotropic strain
High-energy ions
Optical and electrical properties
Structure

Access to Document

10.4028/www.scientific.net/SSP.156-158.523

Cite this

Antonova, I. V., Marin, D. V., Volodin, V. A., Skuratov, V. A., Jedrzejewski, J., & Balberg, I. (2009). Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO₂. In Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009 (pp. 523-528). (Solid State Phenomena; Vol. 156-158). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/SSP.156-158.523

@inproceedings{876b75cbb0eb48338e2833e677364a81,

title = "Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO2",

abstract = "In the present paper we discuss effects due to high-energy ion bombardment of SiO2 layers with embedded Si nanocrystals (NCs), such as the formation of new Si NCs in such layers, amorphization of previously existing NCs, modification of NC size distribution, and modification of optical and electrical properties of NCs. These effects are identified as resulting from anisotropic strain-anisotropic heating in NCs-SiO2 layers under ion irradiation.",

keywords = "Anisotropic heating, Anisotropic strain, High-energy ions, Optical and electrical properties, Structure",

author = "Antonova, {I. V.} and Marin, {D. V.} and Volodin, {V. A.} and Skuratov, {V. A.} and J. Jedrzejewski and I. Balberg",

year = "2009",

doi = "10.4028/www.scientific.net/SSP.156-158.523",

language = "אנגלית",

isbn = "3908451744",

series = "Solid State Phenomena",

publisher = "Trans Tech Publications Ltd",

pages = "523--528",

booktitle = "Gettering and Defect Engineering in Semiconductor Technology XIII",

note = "13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009 ; Conference date: 26-09-2009 Through 02-10-2009",

}

Antonova, IV, Marin, DV, Volodin, VA, Skuratov, VA, Jedrzejewski, J & Balberg, I 2009, Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO₂. in Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009. Solid State Phenomena, vol. 156-158, Trans Tech Publications Ltd, pp. 523-528, 13th International Autumn Meeting - Gettering and Defect Engineering in Semiconductor Technology, GADEST 2009, Berlin, Germany, 26/09/09. https://doi.org/10.4028/www.scientific.net/SSP.156-158.523

Anisotropic strain - Anisotropic heating engineering for silicon nanocrystals in SiO₂. / Antonova, I. V.; Marin, D. V.; Volodin, V. A. et al.
Gettering and Defect Engineering in Semiconductor Technology XIII: GADEST 2009. Trans Tech Publications Ltd, 2009. p. 523-528 (Solid State Phenomena; Vol. 156-158).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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