Anomalies in Tunneling through Localized States

A. Vaknin*, Z. Ovadyahu

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

We study the I-V characteristics of normal-metal/insulator/superconductor (NIS) and superconductor/insulator/superconductor (SIS) junctions with InOx as the insulator. The characteristics of both types of devices exhibit structure at sub-gap as well as above-gap biases. The voltage position of the above-gap structure seems to scale with the gap energy. SIS junctions exhibit only part of the above-gap structure. These effects are associated with the presence of localized states in the barrier region.

Original languageAmerican English
Pages (from-to)413-416
Number of pages4
JournalPhysica Status Solidi (B): Basic Research
Volume205
Issue number1
DOIs
StatePublished - Jan 1998

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