Anomalies in Tunneling through Localized States

A. Vaknin; Z. Ovadyahu

doi:10.1002/(SICI)1521-3951(199801)205:1<413::AID-PSSB413>3.0.CO;2-B

Anomalies in Tunneling through Localized States

A. Vaknin^*, Z. Ovadyahu

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

We study the I-V characteristics of normal-metal/insulator/superconductor (NIS) and superconductor/insulator/superconductor (SIS) junctions with InO_x as the insulator. The characteristics of both types of devices exhibit structure at sub-gap as well as above-gap biases. The voltage position of the above-gap structure seems to scale with the gap energy. SIS junctions exhibit only part of the above-gap structure. These effects are associated with the presence of localized states in the barrier region.

Original language	English
Pages (from-to)	413-416
Number of pages	4
Journal	Physica Status Solidi (B): Basic Research
Volume	205
Issue number	1
DOIs	https://doi.org/10.1002/(SICI)1521-3951(199801)205:1<413::AID-PSSB413>3.0.CO;2-B
State	Published - Jan 1998

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10.1002/(SICI)1521-3951(199801)205:1<413::AID-PSSB413>3.0.CO;2-B

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AB - We study the I-V characteristics of normal-metal/insulator/superconductor (NIS) and superconductor/insulator/superconductor (SIS) junctions with InOx as the insulator. The characteristics of both types of devices exhibit structure at sub-gap as well as above-gap biases. The voltage position of the above-gap structure seems to scale with the gap energy. SIS junctions exhibit only part of the above-gap structure. These effects are associated with the presence of localized states in the barrier region.

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Anomalies in Tunneling through Localized States

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