Anti-coherence based molecular electronics: XOR-gate response

Roi Baer*, Daniel Neuhauser

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

75 Scopus citations

Abstract

We point out and simulate the possible utility of anti-coherence in molecular electronics. In ballistic transfer through a molecule with a large loop that fulfils a certain phase condition on the loop structure, the transfer would be anti-coherent. By applying one or two control voltages to the molecule, that modify the relative phase through the two parts of the loop, the transfer could be controlled, just like in FET or in XOR gates. The simulations use the absorbing-potential based flux-flux formulae with a Huckel-Hamiltonian in a Landauer formulation, and are numerically equivalent to a weighted time-dependent correlation function.

Original languageAmerican English
Pages (from-to)353-362
Number of pages10
JournalChemical Physics
Volume281
Issue number2-3
DOIs
StatePublished - 15 Aug 2002

Bibliographical note

Funding Information:
We thank Mark Ratner, Jeffrey Zink, Eran Rabani and Abraham Nitzan for useful discussions or comments on the manuscript. Special thanks are due to Jim Heath for suggesting we check the application of this effect to XOR-gates. This work was supported by the National Science Foundation the Petroleum Research Fund and the Israel Science Foundation founded by the Israel National Academy of Sciences and Humanities.

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