TY - JOUR
T1 - Application of a new capacitance-voltage method to a-Si:H
AU - Balberg, I.
AU - Gal, E.
AU - Pratt, B.
PY - 1983/12
Y1 - 1983/12
N2 - New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, Ec. We have found that there is a "well" in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below Ec for lightly doped (PH3/SiH4 = 10-4) material are 1017cm-3 eV-1 while for the heavily doped (PH3/SiH4 = 10-2) material they are 4 × 1018cm-3 eV-1.
AB - New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, Ec. We have found that there is a "well" in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below Ec for lightly doped (PH3/SiH4 = 10-4) material are 1017cm-3 eV-1 while for the heavily doped (PH3/SiH4 = 10-2) material they are 4 × 1018cm-3 eV-1.
UR - http://www.scopus.com/inward/record.url?scp=0020910880&partnerID=8YFLogxK
U2 - 10.1016/0022-3093(83)90575-6
DO - 10.1016/0022-3093(83)90575-6
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AN - SCOPUS:0020910880
SN - 0022-3093
VL - 59-60
SP - 277
EP - 280
JO - Journal of Non-Crystalline Solids
JF - Journal of Non-Crystalline Solids
IS - PART 1
ER -
