Application of a new capacitance-voltage method to a-Si:H

I. Balberg; E. Gal; B. Pratt

doi:10.1016/0022-3093(83)90575-6

Application of a new capacitance-voltage method to a-Si:H

I. Balberg^*
, E. Gal
, B. Pratt

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

5 Scopus citations

Abstract

New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, E_c. We have found that there is a "well" in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below E_c for lightly doped (PH₃/SiH₄ = 10^-4) material are 10¹⁷cm^-3 eV^-1 while for the heavily doped (PH₃/SiH₄ = 10^-2) material they are 4 × 10¹⁸cm^-3 eV^-1.

Original language	English
Pages (from-to)	277-280
Number of pages	4
Journal	Journal of Non-Crystalline Solids
Volume	59-60
Issue number	PART 1
DOIs	https://doi.org/10.1016/0022-3093(83)90575-6
State	Published - Dec 1983

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title = "Application of a new capacitance-voltage method to a-Si:H",

abstract = "New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, Ec. We have found that there is a {"}well{"} in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below Ec for lightly doped (PH3/SiH4 = 10-4) material are 1017cm-3 eV-1 while for the heavily doped (PH3/SiH4 = 10-2) material they are 4 × 1018cm-3 eV-1.",

author = "I. Balberg and E. Gal and B. Pratt",

year = "1983",

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doi = "10.1016/0022-3093(83)90575-6",

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TY - JOUR

T1 - Application of a new capacitance-voltage method to a-Si:H

AU - Balberg, I.

AU - Gal, E.

AU - Pratt, B.

PY - 1983/12

Y1 - 1983/12

N2 - New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, Ec. We have found that there is a "well" in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below Ec for lightly doped (PH3/SiH4 = 10-4) material are 1017cm-3 eV-1 while for the heavily doped (PH3/SiH4 = 10-2) material they are 4 × 1018cm-3 eV-1.

AB - New solutions of the Poisson equation for the space charge region capacitance, show that under deep depletion conditions one may use the frequency dependence of the capacitance-voltage characteristics for the determination of the density of states distribution, N(E). The method suggested by these solutions for n-type a-Si:H materials enabled us to determine N(E) in the energy interval between 0.3 and 0.6 eV below the conduction band edge, Ec. We have found that there is a "well" in N(E) around 0.3 eV and that it increases with increasing doping level. Typical results at 0.6 eV below Ec for lightly doped (PH3/SiH4 = 10-4) material are 1017cm-3 eV-1 while for the heavily doped (PH3/SiH4 = 10-2) material they are 4 × 1018cm-3 eV-1.

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

IS - PART 1

ER -

Application of a new capacitance-voltage method to a-Si:H

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