Atomic and Molecular Layer Deposition of Chiral Thin Films Showing up to 99% Spin Selective Transport

H. Al-Bustami, S. Khaldi, O. Shoseyov, S. Yochelis, K. Killi, I. Berg, E. Gross, Y. Paltiel*, R. Yerushalmi*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

19 Scopus citations

Abstract

Spin electronics is delivering a much desired combination of properties such as high speed, low power, and high device densities for the next generation of memory devices. Utilizing chiral-induced spin selectivity (CISS) effect is a promising path toward efficient and simple spintronic devices. To be compatible with state-of-the-art integrated circuits manufacturing methodologies, vapor phase methodologies for deposition of spin filtering layers are needed. Here, we present vapor phase deposition of hybrid organic-inorganic thin films with embedded chirality. The deposition scheme relies on a combination of atomic and molecular layer deposition (A/MLD) utilizing enantiomeric pure alaninol molecular precursors combined with trimethyl aluminum (TMA) and water. The A/MLD deposition method deliver highly conformal thin films allowing the fabrication of several types of nanometric scale spintronic devices. The devices showed high spin polarization (close to 100%) for 5 nm thick spin filter layer deposited by A/MLD. The procedure is compatible with common device processing methodologies.

Original languageAmerican English
Pages (from-to)5022-5028
Number of pages7
JournalNano Letters
Volume22
Issue number12
DOIs
StatePublished - 22 Jun 2022

Bibliographical note

Publisher Copyright:
© 2022 The Authors. Published by American Chemical Society.

Keywords

  • Chiral Induced Spin Selectivity (CISS) effect
  • Chiral oxides
  • Magnetic memory
  • Molecular Layer Deposition
  • Spintronics

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