Atomically thin quantum light-emitting diodes

Carmen Palacios-Berraquero; Matteo Barbone; Dhiren M. Kara; Xiaolong Chen; Ilya Goykhman; Duhee Yoon; Anna K. Ott; Jan Beitner; Kenji Watanabe; Takashi Taniguchi; Andrea C. Ferrari; Mete Atatüre

doi:10.1038/ncomms12978

Atomically thin quantum light-emitting diodes

Carmen Palacios-Berraquero, Matteo Barbone, Dhiren M. Kara, Xiaolong Chen, Ilya Goykhman, Duhee Yoon, Anna K. Ott, Jan Beitner, Kenji Watanabe, Takashi Taniguchi, Andrea C. Ferrari^*, Mete Atatüre

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

271 Scopus citations

Abstract

Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

Original language	English
Article number	12978
Journal	Nature Communications
Volume	7
DOIs	https://doi.org/10.1038/ncomms12978
State	Published - 26 Sep 2016
Externally published	Yes

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Publisher Copyright:
© The Author(s) 2016.

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@article{4ac539c8034d4f8194eeba88e96cd611,

title = "Atomically thin quantum light-emitting diodes",

abstract = "Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.",

author = "Carmen Palacios-Berraquero and Matteo Barbone and Kara, {Dhiren M.} and Xiaolong Chen and Ilya Goykhman and Duhee Yoon and Ott, {Anna K.} and Jan Beitner and Kenji Watanabe and Takashi Taniguchi and Ferrari, {Andrea C.} and Mete Atat{\"u}re",

note = "Publisher Copyright: {\textcopyright} The Author(s) 2016.",

year = "2016",

month = sep,

day = "26",

doi = "10.1038/ncomms12978",

language = "אנגלית",

volume = "7",

journal = "Nature Communications",

issn = "2041-1723",

publisher = "Nature Research",

}

TY - JOUR

T1 - Atomically thin quantum light-emitting diodes

AU - Palacios-Berraquero, Carmen

AU - Barbone, Matteo

AU - Kara, Dhiren M.

AU - Chen, Xiaolong

AU - Goykhman, Ilya

AU - Yoon, Duhee

AU - Ott, Anna K.

AU - Beitner, Jan

AU - Watanabe, Kenji

AU - Taniguchi, Takashi

AU - Ferrari, Andrea C.

AU - Atatüre, Mete

PY - 2016/9/26

Y1 - 2016/9/26

N2 - Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

AB - Transition metal dichalcogenides are optically active, layered materials promising for fast optoelectronics and on-chip photonics. We demonstrate electrically driven single-photon emission from localized sites in tungsten diselenide and tungsten disulphide. To achieve this, we fabricate a light-emitting diode structure comprising single-layer graphene, thin hexagonal boron nitride and transition metal dichalcogenide mono- and bi-layers. Photon correlation measurements are used to confirm the single-photon nature of the spectrally sharp emission. These results present the transition metal dichalcogenide family as a platform for hybrid, broadband, atomically precise quantum photonics devices.

UR - http://www.scopus.com/inward/record.url?scp=84989246441&partnerID=8YFLogxK

U2 - 10.1038/ncomms12978

DO - 10.1038/ncomms12978

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84989246441

SN - 2041-1723

VL - 7

JO - Nature Communications

JF - Nature Communications

M1 - 12978

ER -

Atomically thin quantum light-emitting diodes

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