Bias controlled NIR/LWIR QWIP based structure for night vision and see spot

N. Cohen*, G. Sarusi, G. Mizrahi, A. Shappir, A. Sa'ar

*Corresponding author for this work

Research output: Contribution to journalConference articlepeer-review


A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.

Original languageAmerican English
Pages (from-to)708-714
Number of pages7
JournalProceedings of SPIE - The International Society for Optical Engineering
StatePublished - 2003
EventInfrared Technology and Applications XXIX - Orlando, FL, United States
Duration: 21 Apr 200325 Apr 2003


  • HBT
  • LWIR
  • NIR
  • QWIP


Dive into the research topics of 'Bias controlled NIR/LWIR QWIP based structure for night vision and see spot'. Together they form a unique fingerprint.

Cite this