Bias controlled NIR/LWIR QWIP based structure for night vision and see spot

N. Cohen; G. Sarusi; G. Mizrahi; A. Shappir; A. Sa'ar

doi:10.1117/12.498641

Bias controlled NIR/LWIR QWIP based structure for night vision and see spot

N. Cohen^*
, G. Sarusi
, G. Mizrahi
, A. Shappir
, A. Sa'ar

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.

Original language	English
Pages (from-to)	708-714
Number of pages	7
Journal	Proceedings of SPIE - The International Society for Optical Engineering
Volume	5074
DOIs	https://doi.org/10.1117/12.498641
State	Published - 2003
Event	Infrared Technology and Applications XXIX - Orlando, FL, United States Duration: 21 Apr 2003 → 25 Apr 2003

Keywords

HBT
LWIR
NIR
QWIP
SEE-SPOT

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10.1117/12.498641

Cite this

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title = "Bias controlled NIR/LWIR QWIP based structure for night vision and see spot",

abstract = "A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.",

keywords = "HBT, LWIR, NIR, QWIP, SEE-SPOT",

author = "N. Cohen and G. Sarusi and G. Mizrahi and A. Shappir and A. Sa'ar",

year = "2003",

doi = "10.1117/12.498641",

language = "אנגלית",

volume = "5074",

pages = "708--714",

journal = "Proceedings of SPIE - The International Society for Optical Engineering",

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note = "Infrared Technology and Applications XXIX ; Conference date: 21-04-2003 Through 25-04-2003",

}

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T1 - Bias controlled NIR/LWIR QWIP based structure for night vision and see spot

AU - Cohen, N.

AU - Sarusi, G.

AU - Mizrahi, G.

AU - Shappir, A.

AU - Sa'ar, A.

PY - 2003

Y1 - 2003

N2 - A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.

AB - A novel integrated two terminal structure of Quantum Well Infrared Photodetector (QWIP) with bias controlled dual-band detection at the long wavelength infrared (LWIR) and near infrared (NIR) atmospheric windows is demonstrated. The LWIR sensor is based on a GaAs/AlGaAs standard QWIP, while the NIR sensor is based on a strained InGaAs/GaAs quantum wells structure. The InGaAs/GaAs quantum wells are embedded in a heterostructure bipolar transistor (HBT) structure, which enables high gain and rapid switching capabilities between the two spectral bands. The GaAs/AlGaAs and InGaAs/GaAs monolithic structure allows fabrication of large focal plane array (FPA) that can be operated using a standard two-terminal readout circuit (ROIC). Such FPA configuration allows simultaneous imaging of a NIR laser spot superimposed on a thermal imaging scene.

KW - HBT

KW - LWIR

KW - NIR

KW - QWIP

KW - SEE-SPOT

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U2 - 10.1117/12.498641

DO - 10.1117/12.498641

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AN - SCOPUS:1342289975

SN - 0277-786X

VL - 5074

SP - 708

EP - 714

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

T2 - Infrared Technology and Applications XXIX

Y2 - 21 April 2003 through 25 April 2003

ER -

Bias controlled NIR/LWIR QWIP based structure for night vision and see spot

Abstract

Keywords

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