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Bulk photovoltaic effect in carbon-doped gallium nitride revealed by anomalous surface photovoltage spectroscopy

  • I. Levine
  • , I. Gamov
  • , M. Rusu
  • , K. Irmscher
  • , C. Merschjann
  • , E. Richter
  • , M. Weyers
  • , Th Dittrich

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

A bulk photovoltaic effect was observed in insulating carbon-doped gallium nitride crystals by investigating the light-induced change of the contact potential difference with a Kelvin probe as a function of the carbon concentration in the crystal. Bulk polarization was caused by excitation of defects setting in at photon energies of 0.95-1.05 eV (C1) and 2.5-2.6 eV (C3). From the dependence on the carbon concentration, C1 can be assigned to isolated carbon defects and C3 to tricarbon defects.

Original languageEnglish
Article number245205
JournalPhysical Review B
Volume101
Issue number24
DOIs
StatePublished - 15 Jun 2020
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2020 American Physical Society.

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

  1. SDG 7 - Affordable and Clean Energy
    SDG 7 Affordable and Clean Energy

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