Abstract
The well known capacitance-voltage technique is shown to be a useful spectroscopic tool for the determination of the state distribution in hydrogenated amorphous silicon (a-Si:H) over a substantial portion of the pseudogap. The particular utilization of this tool in the present work is for comparison between materials made by rf glow discharge and materials made by dc glow discharge decomposition of silane.
Original language | English |
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Pages (from-to) | 323-326 |
Number of pages | 4 |
Journal | Journal of Non-Crystalline Solids |
Volume | 77-78 |
Issue number | PART 1 |
DOIs | |
State | Published - 2 Dec 1985 |