Capture cross-section and density of deep gap states in a-SiHx schottky barrier structures

B. Abeles; C. R. Wronski; Y. Goldstein; G. D. Cody

doi:10.1016/0038-1098(82)91043-2

Capture cross-section and density of deep gap states in a-SiH_x schottky barrier structures

B. Abeles^*
, C. R. Wronski
, Y. Goldstein
, G. D. Cody

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

Recombination of charge carriers in a-SiH_x Schottky barriers with density of states near mid-gap ranging from 2.8×10¹⁵-7×10¹⁶cm^-1eV^-1 is attributed to recombination centers with hole capture cross-section of 1.3×10^-15cm².

Original language	English
Pages (from-to)	251-253
Number of pages	3
Journal	Solid State Communications
Volume	41
Issue number	3
DOIs	https://doi.org/10.1016/0038-1098(82)91043-2
State	Published - Jan 1982
Externally published	Yes

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@article{36684e925c1748e9ae452ece750e4801,

title = "Capture cross-section and density of deep gap states in a-SiHx schottky barrier structures",

abstract = "Recombination of charge carriers in a-SiHx Schottky barriers with density of states near mid-gap ranging from 2.8×1015-7×1016cm-1eV-1 is attributed to recombination centers with hole capture cross-section of 1.3×10-15cm2.",

author = "B. Abeles and Wronski, \{C. R.\} and Y. Goldstein and Cody, \{G. D.\}",

year = "1982",

month = jan,

doi = "10.1016/0038-1098(82)91043-2",

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AU - Abeles, B.

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AU - Goldstein, Y.

AU - Cody, G. D.

PY - 1982/1

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AB - Recombination of charge carriers in a-SiHx Schottky barriers with density of states near mid-gap ranging from 2.8×1015-7×1016cm-1eV-1 is attributed to recombination centers with hole capture cross-section of 1.3×10-15cm2.

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EP - 253

JO - Solid State Communications

JF - Solid State Communications

IS - 3

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Capture cross-section and density of deep gap states in a-SiH_x schottky barrier structures

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