Abstract
The preparation of thin films of zirconium oxide and hafnium oxide by decomposition of the diketonate complexes of these metals has been described in two earlier papers. This study deals with aspects of film growth. The rate of film growth (R) depends on the substrate temperature but as the temperature increases, powdery oxide forms, rather than continuous film. R depends on the concentration of the diketonate in the gas phase only at low values of concentrations, and is constant at higher concentrations. The optimal conditions for ZrO//2 and HfO//2 film deposition from organometallic compounds and the influence of oxygen on R are discussed.
Original language | English |
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Pages (from-to) | 1202-1207 |
Number of pages | 6 |
Journal | Journal of the Electrochemical Society |
Volume | 126 |
Issue number | 7 |
State | Published - 1979 |