CHARACTERISTICS OF GROWTH OF FILMS OF ZIRCONIUM AND HAFNIUM OXIDES (ZrO2, HfO2) BY THERMAL DECOMPOSITION OF ZIRCONIUM AND HAFNIUM beta -DIKETONATE COMPLEXES IN THE PRESENCE AND ABSENCE OF OXYGEN.

M. Balog*, M. Schieber, M. Michman, S. Patai

*Corresponding author for this work

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Abstract

The preparation of thin films of zirconium oxide and hafnium oxide by decomposition of the diketonate complexes of these metals has been described in two earlier papers. This study deals with aspects of film growth. The rate of film growth (R) depends on the substrate temperature but as the temperature increases, powdery oxide forms, rather than continuous film. R depends on the concentration of the diketonate in the gas phase only at low values of concentrations, and is constant at higher concentrations. The optimal conditions for ZrO//2 and HfO//2 film deposition from organometallic compounds and the influence of oxygen on R are discussed.

Original languageEnglish
Pages (from-to)1202-1207
Number of pages6
JournalJournal of the Electrochemical Society
Volume126
Issue number7
StatePublished - 1979

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