Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

Lin Pang; Maziar Nezhad; Uriel Levy; Chiaho Tsai; Yeshaiahu Fainman

doi:10.1117/12.590564

Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

Lin Pang^*, Maziar Nezhad, Uriel Levy, Chiaho Tsai, Yeshaiahu Fainman

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › peer-review

Abstract

We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 μm wavelength was designed, fabricated and characterized.

Original language	English
Article number	35
Pages (from-to)	252-260
Number of pages	9
Journal	Progress in Biomedical Optics and Imaging - Proceedings of SPIE
Volume	5720
DOIs	https://doi.org/10.1117/12.590564
State	Published - 2005
Externally published	Yes
Event	Micromachining Technology for Micro-Optics and Nano-Optics III - San Jose, CA, United States Duration: 25 Jan 2005 → 27 Jan 2005

Keywords

Drying-etch
Form birefringence
Holographic lithography
SU-8

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10.1117/12.590564

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title = "Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8",

abstract = "We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 μm wavelength was designed, fabricated and characterized.",

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doi = "10.1117/12.590564",

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T1 - Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

AU - Pang, Lin

AU - Nezhad, Maziar

AU - Levy, Uriel

AU - Tsai, Chiaho

AU - Fainman, Yeshaiahu

PY - 2005

Y1 - 2005

N2 - We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 μm wavelength was designed, fabricated and characterized.

AB - We describe an approach to use the thin layer of SU-8 submicron pattern produced by holographic lithography as dry etching mask in chemically assisted ion beam etching (CAIBE) system. The effect of chlorine gas flow on etched sidewall was investigated; by matching the lateral etch and deposition rate, etching selectivity of about 7:1 has been achieved with vertical and smooth sidewall and damage-free upper portion of the etched structure. As an application, a half wavelength retardation plate for 1.55 μm wavelength was designed, fabricated and characterized.

KW - Drying-etch

KW - Form birefringence

KW - Holographic lithography

KW - SU-8

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JO - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

JF - Progress in Biomedical Optics and Imaging - Proceedings of SPIE

M1 - 35

T2 - Micromachining Technology for Micro-Optics and Nano-Optics III

Y2 - 25 January 2005 through 27 January 2005

ER -

Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

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Keywords

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