Characterization of chemically assisted ion beam etching and Form birefringence structure fabrication in GaAs using SU-8

Keyphrases

• Gallium Arsenide 100%
• Chemically Assisted Ion Beam Etching 100%
• Form Birefringence 100%
• SU-8 100%
• Holographic Lithography 50%
• Deposition Rate 50%
• Etching Rate 50%
• Gas Flow 50%
• Smooth Sidewalls 50%
• Damage-free 50%
• Sidewall 50%
• Chlorine Gas 50%
• Effect of Chlorine 50%
• Half-wavelength 50%
• Submicron Patterns 50%
• Etching Mask 50%
• Dry Etching 50%
• Etch Selectivity 50%
• Vertical Sidewall 50%
• Retardation Plate 50%

Engineering

• Gallium Arsenide 100%
• Side Wall 100%
• Retardation 50%
• Deposition Rate 50%
• Lithography 50%
• Thin Layer 50%
• Etch Rate 50%
• Gas Flow 50%
• Half Wavelength 50%
• Dry Etching 50%

Material Science

• Lithography 100%
• Gallium Arsenide 100%
• Birefringence 100%
• Gas Flow 100%
• Dry Etching 100%