Characterization of oxidized a-SiHx surfaces used in mis structures

Y. Goldstein; B. Abeles; C. R. Wronski; S. R. Kelemen; H. Witzke

doi:10.1007/BF02654615

Characterization of oxidized a-SiH_x surfaces used in mis structures

Y. Goldstein^*, B. Abeles, C. R. Wronski, S. R. Kelemen, H. Witzke

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

7 Scopus citations

Abstract

Atomically clean and oxidized surfaces of a-SiH_x films, prepared by plasma decomposition of SiH₄ in a capacitative reactor, were studied using Auger and UV photoemission spectroscopy. The oxides were characterized in terms of the fine structure of the Si_LVV Auger transition. We also studied the electrical properties of MIS solar cell structures in which the a-SiH_x film was given the same treatment as the samples for surface studies and correlated the results of the two kinds of measurements. For thin (< 20 Å) oxides the photodiode open circuit voltage increases linearly with oxide thickness. This increase is found to be due to an increase in the barrier height and the built-in potential upon oxidation.

Original language	English
Pages (from-to)	191-205
Number of pages	15
Journal	Journal of Electronic Materials
Volume	11
Issue number	1
DOIs	https://doi.org/10.1007/BF02654615
State	Published - Jan 1982
Externally published	Yes

Keywords

Auger
Hydrogenated amorphous silicon
MIS structures
Photovoltaic effect
Surfaces
UPS

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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10.1007/BF02654615

Cite this

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title = "Characterization of oxidized a-SiHx surfaces used in mis structures",

abstract = "Atomically clean and oxidized surfaces of a-SiHx films, prepared by plasma decomposition of SiH4 in a capacitative reactor, were studied using Auger and UV photoemission spectroscopy. The oxides were characterized in terms of the fine structure of the SiLVV Auger transition. We also studied the electrical properties of MIS solar cell structures in which the a-SiHx film was given the same treatment as the samples for surface studies and correlated the results of the two kinds of measurements. For thin (< 20 {\AA}) oxides the photodiode open circuit voltage increases linearly with oxide thickness. This increase is found to be due to an increase in the barrier height and the built-in potential upon oxidation.",

keywords = "Auger, Hydrogenated amorphous silicon, MIS structures, Photovoltaic effect, Surfaces, UPS",

author = "Y. Goldstein and B. Abeles and Wronski, {C. R.} and Kelemen, {S. R.} and H. Witzke",

year = "1982",

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AU - Goldstein, Y.

AU - Abeles, B.

AU - Wronski, C. R.

AU - Kelemen, S. R.

AU - Witzke, H.

PY - 1982/1

Y1 - 1982/1

N2 - Atomically clean and oxidized surfaces of a-SiHx films, prepared by plasma decomposition of SiH4 in a capacitative reactor, were studied using Auger and UV photoemission spectroscopy. The oxides were characterized in terms of the fine structure of the SiLVV Auger transition. We also studied the electrical properties of MIS solar cell structures in which the a-SiHx film was given the same treatment as the samples for surface studies and correlated the results of the two kinds of measurements. For thin (< 20 Å) oxides the photodiode open circuit voltage increases linearly with oxide thickness. This increase is found to be due to an increase in the barrier height and the built-in potential upon oxidation.

AB - Atomically clean and oxidized surfaces of a-SiHx films, prepared by plasma decomposition of SiH4 in a capacitative reactor, were studied using Auger and UV photoemission spectroscopy. The oxides were characterized in terms of the fine structure of the SiLVV Auger transition. We also studied the electrical properties of MIS solar cell structures in which the a-SiHx film was given the same treatment as the samples for surface studies and correlated the results of the two kinds of measurements. For thin (< 20 Å) oxides the photodiode open circuit voltage increases linearly with oxide thickness. This increase is found to be due to an increase in the barrier height and the built-in potential upon oxidation.

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