Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Y. Alpern; J. Shappir

doi:10.1063/1.98623

Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Y. Alpern^*, J. Shappir

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.

Original language	English
Pages (from-to)	1524-1526
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	19
DOIs	https://doi.org/10.1063/1.98623
State	Published - 1987

Access to Document

10.1063/1.98623

Cite this

@article{5aa318a8ecc1418b916e0b433bf37ef4,

title = "Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement",

abstract = "Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.",

author = "Y. Alpern and J. Shappir",

year = "1987",

doi = "10.1063/1.98623",

language = "אנגלית",

volume = "51",

pages = "1524--1526",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

AU - Alpern, Y.

AU - Shappir, J.

PY - 1987

Y1 - 1987

N2 - Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.

AB - Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.

UR - http://www.scopus.com/inward/record.url?scp=36549097424&partnerID=8YFLogxK

U2 - 10.1063/1.98623

DO - 10.1063/1.98623

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:36549097424

SN - 0003-6951

VL - 51

SP - 1524

EP - 1526

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Abstract

Access to Document

Other files and links

Fingerprint

Cite this