Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Y. Alpern; J. Shappir

doi:10.1063/1.98623

Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

Y. Alpern^*
, J. Shappir

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to journal › Article › peer-review

1 Scopus citations

Abstract

Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.

Original language	English
Pages (from-to)	1524-1526
Number of pages	3
Journal	Applied Physics Letters
Volume	51
Issue number	19
DOIs	https://doi.org/10.1063/1.98623
State	Published - 1987

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abstract = "Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.",

author = "Y. Alpern and J. Shappir",

year = "1987",

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AU - Shappir, J.

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AB - Metal-oxide-semiconductor capacitors with undoped polycrystalline Si (polysilicon) electrodes were studied and a model was developed to explain the voltage and frequency dependence of the capacitance and serial resistance. The model assumes random distribution of leaky paths in the polycrystalline Si layer which supply the charge to the polysilicon-oxide interface.

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Characterization of short-range leakage currents in undoped polycrystalline Si by means of capacitance-voltage measurement

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