CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SiO//2.

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Research output: Contribution to journal › Conference article › peer-review

34 Scopus citations

Original language	English
Pages (from-to)	182-185
Number of pages	4
Journal	Technical Digest - International Electron Devices Meeting
State	Published - 1983

Cite this

@article{3af8c012b0db49a4875b6c8181533d2a,

title = "CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SiO//2.",

author = "Y. Nissan-Cohen and J. Shappir and D. Frohman-Bentchkowsky",

year = "1983",

language = "אנגלית",

pages = "182--185",

journal = "Technical Digest - International Electron Devices Meeting",

issn = "0163-1918",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

}

TY - JOUR

T1 - CHARACTERIZATION OF SIMULTANEOUS BULK AND INTERFACE HIGH-FIELD TRAPPING EFFECTS IN SiO//2.

AU - Nissan-Cohen, Y.

AU - Shappir, J.

AU - Frohman-Bentchkowsky, D.

PY - 1983

Y1 - 1983

UR - https://www.scopus.com/pages/publications/0020883248

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AN - SCOPUS:0020883248

SN - 0163-1918

SP - 182

EP - 185

JO - Technical Digest - International Electron Devices Meeting

JF - Technical Digest - International Electron Devices Meeting

ER -