Abstract
Submonolayer island growth of Cu on Cu(001) is simulated using energy barriers derived by the atomembedding method of Finnis and Sinclair. We find that the island density during deposition quickly saturates and forms a plateau over a range of the coverage θ. We observe that due to high edge mobility the islands form compact shapes and that the average island size R scales like R ~ θn where n≈ 0.5, in agreement with recent experiments.
| Original language | English |
|---|---|
| Pages (from-to) | L569-L574 |
| Journal | Surface Science |
| Volume | 306 |
| Issue number | 3 |
| DOIs | |
| State | Published - 10 Apr 1994 |
| Externally published | Yes |
Bibliographical note
Funding Information:We would like to thank G.V. Chestera nd M. Karimi for helpful discussionsa nd Hong Zengf or technicaal ssistanceG.. T.B. would like to acknowledgesu pportb y NSF grant DMR-9121654t hrought he Material ScienceC enter and the Cornell National SupercomputinFga - cility. O.B. thankst he NSF for supportu nder grantsD MR-9118065a nd DMR-9012974( at Cornell) and DMR-9217284( at Syracuse) and G.V. underg rantD MR-9119735M. .B. and D.O.B. wouldl ike to acknowledgseu pportf rom the NW0 undert he FOM program.