Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy

D. Hashimshony; I. Geltner; G. Cohen; Y. Avitzour; A. Zigler; C. Smith

doi:10.1063/1.1412574

Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy

D. Hashimshony, I. Geltner^*, G. Cohen, Y. Avitzour, A. Zigler, C. Smith

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

45 Scopus citations

Abstract

We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 μm are characterized.

Original language	English
Pages (from-to)	5778-5781
Number of pages	4
Journal	Journal of Applied Physics
Volume	90
Issue number	11
DOIs	https://doi.org/10.1063/1.1412574
State	Published - Dec 2001

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@article{bbc1e95fda894f61a092acb31a77f770,

title = "Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy",

abstract = "We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 μm are characterized.",

author = "D. Hashimshony and I. Geltner and G. Cohen and Y. Avitzour and A. Zigler and C. Smith",

year = "2001",

month = dec,

doi = "10.1063/1.1412574",

language = "אנגלית",

volume = "90",

pages = "5778--5781",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics",

number = "11",

}

TY - JOUR

T1 - Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy

AU - Hashimshony, D.

AU - Geltner, I.

AU - Cohen, G.

AU - Avitzour, Y.

AU - Zigler, A.

AU - Smith, C.

PY - 2001/12

Y1 - 2001/12

N2 - We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 μm are characterized.

AB - We have measured the dielectric properties and thickness of thin semiconductor epitaxy layers by the reflection of THz radiation from the surface of a two-layered semiconductor wafer. When reflecting from two interfaces the electromagnetic pulse has a destructive interference at a specific wavelength dependent on the thickness of the outer layer and its dielectric function. Near that frequency the reflection coefficient has a significant drop. By extending the incident pulse spectrum to include this interference frequency, a measurement of the thickness can be obtained together with a direct measurement of the carrier number density. By this technique epitaxy layers of thickness down to 15 μm are characterized.

UR - http://www.scopus.com/inward/record.url?scp=0035576090&partnerID=8YFLogxK

U2 - 10.1063/1.1412574

DO - 10.1063/1.1412574

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:0035576090

SN - 0021-8979

VL - 90

SP - 5778

EP - 5781

JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 11

ER -

Characterization of the electrical properties and thickness of thin epitaxial semiconductor layers by THz reflection spectroscopy

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