Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

Irina V. Antonova; Mitrofan B. Gulyaev; Zoya S. Yanovitskaya; Yehuda Goldstein; Jedzzey Jedrzejewski

doi:10.1109/MEP.2006.335626

Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

Irina V. Antonova
, Mitrofan B. Gulyaev
, Zoya S. Yanovitskaya
, Yehuda Goldstein
, Jedzzey Jedrzejewski

Racah Institute of Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

The system of silicon nanocrystals embedded in SiO₂ was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K.. Variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.

Original language	English
Title of host publication	Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings
Subtitle of host publication	CAOL 2006; POEO 2006; ISP 2006
Pages	57-60
Number of pages	4
DOIs	https://doi.org/10.1109/MEP.2006.335626
State	Published - 2006
Event	MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006 - Guanajuato, Mexico Duration: 7 Nov 2006 → 10 Nov 2006

Publication series

Name	Multiconference on Electronics and Photonics, MEP 2006

Conference

Conference	MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006
Country/Territory	Mexico
City	Guanajuato
Period	7/11/06 → 10/11/06

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

Conductivity
Excess Si content
Oxide matrix
Silicon nanocrystals

Access to Document

10.1109/MEP.2006.335626

Cite this

Antonova, I. V., Gulyaev, M. B., Yanovitskaya, Z. S., Goldstein, Y., & Jedrzejewski, J. (2006). Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence. In Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006 (pp. 57-60). Article 4135710 (Multiconference on Electronics and Photonics, MEP 2006). https://doi.org/10.1109/MEP.2006.335626

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title = "Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence",

abstract = "The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74\%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K.. Variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.",

keywords = "Conductivity, Excess Si content, Oxide matrix, Silicon nanocrystals",

author = "Antonova, \{Irina V.\} and Gulyaev, \{Mitrofan B.\} and Yanovitskaya, \{Zoya S.\} and Yehuda Goldstein and Jedzzey Jedrzejewski",

year = "2006",

doi = "10.1109/MEP.2006.335626",

language = "אנגלית",

isbn = "1424406285",

series = "Multiconference on Electronics and Photonics, MEP 2006",

pages = "57--60",

booktitle = "Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings",

note = "MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006 ; Conference date: 07-11-2006 Through 10-11-2006",

}

Antonova, IV, Gulyaev, MB, Yanovitskaya, ZS, Goldstein, Y & Jedrzejewski, J 2006, Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence. in Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006., 4135710, Multiconference on Electronics and Photonics, MEP 2006, pp. 57-60, MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006, Guanajuato, Mexico, 7/11/06. https://doi.org/10.1109/MEP.2006.335626

Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence. / Antonova, Irina V.; Gulyaev, Mitrofan B.; Yanovitskaya, Zoya S. et al.
Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006. 2006. p. 57-60 4135710 (Multiconference on Electronics and Photonics, MEP 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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AU - Antonova, Irina V.

AU - Gulyaev, Mitrofan B.

AU - Yanovitskaya, Zoya S.

AU - Goldstein, Yehuda

AU - Jedrzejewski, Jedzzey

PY - 2006

Y1 - 2006

N2 - The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K.. Variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.

AB - The system of silicon nanocrystals embedded in SiO2 was characterized by electrical measurements depending on the excess Si content in oxide ranged from 6 to 74%. It was found that the charge trapped on nanocrystals in oxide has the maximal value at the same excess Si content as maximal photoluminescence. Electron transport through the oxide after percolation transient demonstrates the activation character of current at T > 230 K.. Variable range hopping conductivity strongly depended on the excess Si content was observed at lower temperatures.

KW - Conductivity

KW - Excess Si content

KW - Oxide matrix

KW - Silicon nanocrystals

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T2 - MEP 2006: 3rd Int. Conf. on Adv. Optoelectron. and Lasers, CAOL 2006; 3rd Int. Conf. on Precision Oscillations in Electron. and Optics: Theory and Appl., POEO 2006; 1st Int. Workshop on Image and Signal Proces., ISP 2006

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Antonova IV, Gulyaev MB, Yanovitskaya ZS, Goldstein Y, Jedrzejewski J. Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence. In Multiconference on Electronics and Photonics, MEP 2006 - Embodied Meetings: CAOL 2006; POEO 2006; ISP 2006. 2006. p. 57-60. 4135710. (Multiconference on Electronics and Photonics, MEP 2006). doi: 10.1109/MEP.2006.335626

Charge and electron transport in oxide with silicon nanocrystals in comparison with photoluminescence

Abstract

Publication series

Conference

UN SDGs

Keywords

Access to Document

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