Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

M. Levy; Yu L. Khait; R. Beserman; A. Sa'ar; V. Thierry-Mieg; R. Planel

doi:10.1063/1.1369413

Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

M. Levy^*, Yu L. Khait, R. Beserman, A. Sa'ar, V. Thierry-Mieg, R. Planel

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.

Original language	English
Pages (from-to)	2879-2881
Number of pages	3
Journal	Applied Physics Letters
Volume	78
Issue number	19
DOIs	https://doi.org/10.1063/1.1369413
State	Published - 7 May 2001

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title = "Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells",

abstract = "The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.",

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T1 - Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

AU - Levy, M.

AU - Khait, Yu L.

AU - Beserman, R.

AU - Sa'ar, A.

AU - Thierry-Mieg, V.

AU - Planel, R.

PY - 2001/5/7

Y1 - 2001/5/7

N2 - The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.

AB - The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.

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JO - Applied Physics Letters

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Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

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