Charge transfer of carriers by interband photoexcitation in asymmetric GaAs/AlGaAs coupled quantum wells

M. Levy*, Yu L. Khait, R. Beserman, A. Sa'ar, V. Thierry-Mieg, R. Planel

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The influence of interband photoexcitation intensity on the photoluminescence line shape was investigated in GaAs/AlGaAs modulation-doped asymmetric structure composed of a wide quantum well weakly coupled to a narrow quantum well. The emission spectra show a broadening and a narrowing of the linewidths from the wide quantum well and from the narrow quantum well, respectively, with increasing laser power. In addition, we observe a fast increase of the emission intensity from the narrow quantum well with respect to that from the wide quantum well. These processes are shown to be the result of carrier transfer into the narrow quantum well. We propose a charge transfer model to explain semiquantitatively our results.

Original languageAmerican English
Pages (from-to)2879-2881
Number of pages3
JournalApplied Physics Letters
Volume78
Issue number19
DOIs
StatePublished - 7 May 2001

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