TY - JOUR
T1 - Charge transfer rates and electron trapping at buried interfaces of perovskite solar cells
AU - Levine, Igal
AU - Al-Ashouri, Amran
AU - Musiienko, Artem
AU - Hempel, Hannes
AU - Magomedov, Artiom
AU - Drevilkauskaite, Aida
AU - Getautis, Vytautas
AU - Menzel, Dorothee
AU - Hinrichs, Karsten
AU - Unold, Thomas
AU - Albrecht, Steve
AU - Dittrich, Thomas
N1 - Publisher Copyright:
© 2021 The Authors
PY - 2021/11/17
Y1 - 2021/11/17
N2 - Identification of electronic processes at buried interfaces of charge-selective contacts is crucial for photovoltaic and photocatalysis research. Here, transient surface photovoltage (SPV) is used to study the passivation of different hole-selective carbazole-based SAMs. It is shown that transient SPV and transient photoluminescence provide complementary information on charge transfer kinetics and trapping/de-trapping mechanisms, and that trap-assisted non-radiative recombination losses originate from electron trapping at the SAM-modified ITO/perovskite interface. The hole transfer rates and the density of interface electron traps, obtained by fitting SPV transients with a minimalistic kinetic model, depended strongly on the SAM's chemical structure, and densities of interface traps as low as 109 cm−2, on par with highly passivated c-Si surfaces, were reached for Me-4PACz, previously used in record perovskite/silicon tandem solar cells. The extracted hole transfer rate constants and interface trap densities correlated well with the corresponding fill factors and open-circuit voltages of high-efficiency solar cells.
AB - Identification of electronic processes at buried interfaces of charge-selective contacts is crucial for photovoltaic and photocatalysis research. Here, transient surface photovoltage (SPV) is used to study the passivation of different hole-selective carbazole-based SAMs. It is shown that transient SPV and transient photoluminescence provide complementary information on charge transfer kinetics and trapping/de-trapping mechanisms, and that trap-assisted non-radiative recombination losses originate from electron trapping at the SAM-modified ITO/perovskite interface. The hole transfer rates and the density of interface electron traps, obtained by fitting SPV transients with a minimalistic kinetic model, depended strongly on the SAM's chemical structure, and densities of interface traps as low as 109 cm−2, on par with highly passivated c-Si surfaces, were reached for Me-4PACz, previously used in record perovskite/silicon tandem solar cells. The extracted hole transfer rate constants and interface trap densities correlated well with the corresponding fill factors and open-circuit voltages of high-efficiency solar cells.
KW - buried interfaces
KW - carbazole-based SAMs
KW - charge transfer
KW - interface passivation
KW - interfacial recombination
KW - perovskite solar cell
KW - self-assembled monolayer
KW - surface photovoltage
KW - time-resolved PL
KW - time-resolved SPV
UR - http://www.scopus.com/inward/record.url?scp=85117693715&partnerID=8YFLogxK
U2 - 10.1016/j.joule.2021.07.016
DO - 10.1016/j.joule.2021.07.016
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AN - SCOPUS:85117693715
SN - 2542-4351
VL - 5
SP - 2915
EP - 2933
JO - Joule
JF - Joule
IS - 11
ER -