Charge transfer rates and electron trapping at buried interfaces of perovskite solar cells

Igal Levine*, Amran Al-Ashouri, Artem Musiienko, Hannes Hempel, Artiom Magomedov, Aida Drevilkauskaite, Vytautas Getautis, Dorothee Menzel, Karsten Hinrichs, Thomas Unold, Steve Albrecht, Thomas Dittrich

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

223 Scopus citations

Abstract

Identification of electronic processes at buried interfaces of charge-selective contacts is crucial for photovoltaic and photocatalysis research. Here, transient surface photovoltage (SPV) is used to study the passivation of different hole-selective carbazole-based SAMs. It is shown that transient SPV and transient photoluminescence provide complementary information on charge transfer kinetics and trapping/de-trapping mechanisms, and that trap-assisted non-radiative recombination losses originate from electron trapping at the SAM-modified ITO/perovskite interface. The hole transfer rates and the density of interface electron traps, obtained by fitting SPV transients with a minimalistic kinetic model, depended strongly on the SAM's chemical structure, and densities of interface traps as low as 109 cm−2, on par with highly passivated c-Si surfaces, were reached for Me-4PACz, previously used in record perovskite/silicon tandem solar cells. The extracted hole transfer rate constants and interface trap densities correlated well with the corresponding fill factors and open-circuit voltages of high-efficiency solar cells.

Original languageEnglish
Pages (from-to)2915-2933
Number of pages19
JournalJoule
Volume5
Issue number11
DOIs
StatePublished - 17 Nov 2021
Externally publishedYes

Bibliographical note

Publisher Copyright:
© 2021 The Authors

Keywords

  • buried interfaces
  • carbazole-based SAMs
  • charge transfer
  • interface passivation
  • interfacial recombination
  • perovskite solar cell
  • self-assembled monolayer
  • surface photovoltage
  • time-resolved PL
  • time-resolved SPV

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