CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

Rivka Gherabli, Roy Zektzer, Meir Grajower, Joseph Shappir, Christian Frydendahl, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Scopus citations


The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode. This new diode is based on a horizontal PN junction in silicon with a unique layout providing the NDR feature, and we show how it can easily be implemented into a photonic micro-ring resonator to enable a bistable device with a fully optical readout in the telecom regime. Our result is an important stepping stone on the way to new nonlinear electro-optic and neuromorphic computing structures based on this new NDR diode.

Original languageAmerican English
Article numbereadf5589
JournalScience advances
Issue number15
StatePublished - Apr 2023

Bibliographical note

Funding Information:
We acknowledge the financial contribution of the PetaCloud consortium. R.G. acknowledges the financial support given by the Shulamit Aloni scholarship of the Israeli Ministry of Science and Technology. C.F. is supported by the Carlsberg Foundation as an internationalization fellow.

Publisher Copyright:
Copyright © 2023 The Authors, some rights reserved.


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