CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

Rivka Gherabli, Roy Zektzer, Meir Grajower, Joseph Shappir, Christian Frydendahl, Uriel Levy*

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


The impending collapse of Moore-like growth of computational power has spurred the development of alternative computing architectures, such as optical or electro-optical computing. However, many of the current demonstrations in literature are not compatible with the dominant complementary metal-oxide semiconductor (CMOS) technology used in large-scale manufacturing today. Here, inspired by the famous Esaki diode demonstrating negative differential resistance (NDR), we show a fully CMOS-compatible electro-optical memory device, based on a new type of NDR diode. This new diode is based on a horizontal PN junction in silicon with a unique layout providing the NDR feature, and we show how it can easily be implemented into a photonic micro-ring resonator to enable a bistable device with a fully optical readout in the telecom regime. Our result is an important stepping stone on the way to new nonlinear electro-optic and neuromorphic computing structures based on this new NDR diode.

Original languageAmerican English
Article numbereadf5589
JournalScience advances
Issue number15
StatePublished - Apr 2023

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