CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

Rivka Gherabli; Roy Zektzer; Meir Grajower; Joseph Shappir; Christian Frydendahl; Uriel Levy

doi:10.1117/12.3029908

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

Rivka Gherabli^*, Roy Zektzer, Meir Grajower, Joseph Shappir, Christian Frydendahl, Uriel Levy

^*Corresponding author for this work

Department of Applied Physics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

Abstract

We experimentally demonstrate a new electro-optic SRAM element fully CMOS compatible. Inspired by the Esaki diode, presenting negative differential resistance (NDR), we designed a new type of NDR diode based on a horizontal PN junction and a region with higher acceptor concentration, P⁺, in silicon. We embedded the new NDR into a photonic micro-ring resonator to enable a bistable device with electrical and optical readout capabilities. Our device is remarkable for its simplicity, CMOS compatibility and its low power consumption around the nanowatt, but it’s also an important steppingstone on the way to new nonlinear electro-optic and neuromorphic computing structures.

Original language	English
Title of host publication	Integrated Photonics Platforms III
Editors	Roel G. Baets, Peter O'Brien, Laurent Vivien
Publisher	SPIE
ISBN (Electronic)	9781510673427
DOIs	https://doi.org/10.1117/12.3029908
State	Published - 2024
Event	Integrated Photonics Platforms III 2024 - Strasbourg, France Duration: 7 Apr 2024 → 10 Apr 2024

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	13012
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	Integrated Photonics Platforms III 2024
Country/Territory	France
City	Strasbourg
Period	7/04/24 → 10/04/24

Bibliographical note

Publisher Copyright:
© 2024 SPIE.

Keywords

CMOS
electro-optic SRAM
integrated photonic devices
micro-ring resonator

Access to Document

10.1117/12.3029908

Cite this

Gherabli, R., Zektzer, R., Grajower, M., Shappir, J., Frydendahl, C., & Levy, U. (2024). CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance. In R. G. Baets, P. O'Brien, & L. Vivien (Eds.), Integrated Photonics Platforms III Article 130120W (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13012). SPIE. https://doi.org/10.1117/12.3029908

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Gherabli, R, Zektzer, R, Grajower, M, Shappir, J, Frydendahl, C & Levy, U 2024, CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance. in RG Baets, P O'Brien & L Vivien (eds), Integrated Photonics Platforms III., 130120W, Proceedings of SPIE - The International Society for Optical Engineering, vol. 13012, SPIE, Integrated Photonics Platforms III 2024, Strasbourg, France, 7/04/24. https://doi.org/10.1117/12.3029908

CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance. / Gherabli, Rivka; Zektzer, Roy; Grajower, Meir et al.
Integrated Photonics Platforms III. ed. / Roel G. Baets; Peter O'Brien; Laurent Vivien. SPIE, 2024. 130120W (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 13012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › peer-review

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CMOS-compatible electro-optical SRAM cavity device based on negative differential resistance

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Keywords

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