CMOS TECHNOLOGY - PAST, PRESENT AND FUTURE.

J. Shappir

CMOS TECHNOLOGY - PAST, PRESENT AND FUTURE.

J. Shappir^*

^*Corresponding author for this work

The Rachel and Selim Benin School of Engineering and Computer Science

Research output: Contribution to conference › Paper › peer-review

Abstract

Summary form only given. A history of CMOS technology is presented. The latch-up problem is discussed in detail and its various solutions are described. They include the use of epitaxial substrate, the formation of twin tubs, lowering the supply voltage, utilizing trench isolations, and the use of CMOS SOS.

Original language	English
State	Published - 1985

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abstract = "Summary form only given. A history of CMOS technology is presented. The latch-up problem is discussed in detail and its various solutions are described. They include the use of epitaxial substrate, the formation of twin tubs, lowering the supply voltage, utilizing trench isolations, and the use of CMOS SOS.",

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AB - Summary form only given. A history of CMOS technology is presented. The latch-up problem is discussed in detail and its various solutions are described. They include the use of epitaxial substrate, the formation of twin tubs, lowering the supply voltage, utilizing trench isolations, and the use of CMOS SOS.

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CMOS TECHNOLOGY - PAST, PRESENT AND FUTURE.

Abstract

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