TY - JOUR
T1 - Comparative investigation of photoluminescence of silicon wire structures and silicon oxide films
AU - Torchynska, T.
AU - Aguilar-Hernandez, J.
AU - Morales Rodriguez, M.
AU - Mejia-Garcia, C.
AU - Contreras-Puente, G.
AU - Becerril Espinoza, F. G.
AU - Bulakh, B. M.
AU - Scherbina, L. V.
AU - Goldstein, Y.
AU - Many, A.
AU - Jedrzejewski, J.
PY - 2002/4
Y1 - 2002/4
N2 - Photoluminescence spectra and their dependence on temperature as well as Raman scattering spectra and Atomic Force Microscopy investigations have been used to study the peculiarities of the red photoluminescence band in low-dimensional Si structures, such as porous silicon and silicon oxide films. It has been shown that the red photoluminescence band of porous silicon is complex and can be decomposed into two elementary bands. It was discovered that elementary band intensities depend very much on surface morphology of porous silicon. The same positions of the photoluminescence bands are also observed in silicon oxide films for different oxide composition. Comparative investigation of the PL temperature dependences in porous silicon and silicon oxide films indicates that silicon-oxide defect related mechanisms of some elementary photoluminescence bands are involved.
AB - Photoluminescence spectra and their dependence on temperature as well as Raman scattering spectra and Atomic Force Microscopy investigations have been used to study the peculiarities of the red photoluminescence band in low-dimensional Si structures, such as porous silicon and silicon oxide films. It has been shown that the red photoluminescence band of porous silicon is complex and can be decomposed into two elementary bands. It was discovered that elementary band intensities depend very much on surface morphology of porous silicon. The same positions of the photoluminescence bands are also observed in silicon oxide films for different oxide composition. Comparative investigation of the PL temperature dependences in porous silicon and silicon oxide films indicates that silicon-oxide defect related mechanisms of some elementary photoluminescence bands are involved.
UR - http://www.scopus.com/inward/record.url?scp=0036532719&partnerID=8YFLogxK
U2 - 10.1016/S0022-3697(01)00194-9
DO - 10.1016/S0022-3697(01)00194-9
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AN - SCOPUS:0036532719
SN - 0022-3697
VL - 63
SP - 561
EP - 568
JO - Journal of Physics and Chemistry of Solids
JF - Journal of Physics and Chemistry of Solids
IS - 4
ER -