COMPARISON OF ALUMINUM TO POLYSILICON GATE MOS CAPACITORS UNDER CHARGE INJECTION.

E. Avni*, Y. Nissan-Cohen, J. Shappir

*Corresponding author for this work

Research output: Contribution to conferencePaperpeer-review

Abstract

The phenomenon of positive charge formation in SiO//2 in MOS capacitors caused by charge injection in high electric fields is investigated. I-V and C-V measurements make it possible to distinguish between bulk charge and surface state effects. On the basis of a comparison between aluminum and polysilicon gate MOS capacitors, phenomema related inherently to the SiO//2 are distinguished from those influenced by the gate material.

Original languageEnglish
StatePublished - 1985

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