TY - JOUR
T1 - Comparison of random field strengths in (1-x)SrTiO3-x BiFeO3and (1-x)SrTiO3-x BaTiO3relaxor ferroelectrics by means of acoustic emission
AU - Dul'Kin, Evgeniy
AU - Roth, Michael
N1 - Publisher Copyright:
© EDP Sciences, 2020.
PY - 2020/11/1
Y1 - 2020/11/1
N2 - In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x=0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.
AB - In relaxor (1-x)SrTiO3-xBiFeO3 ferroelectrics ceramics (x=0.2, 0.3 and 0.4) both intermediate temperatures and Burns temperatures were successfully detected and their behavior were investigated in dependence on an external bias field using an acoustic emission. All these temperatures exhibit a non-trivial behavior, i.e. attain the minima at some threshold fields as a bias field enhances. It is established that the threshold fields decrease as x increases in (1-x)SrTiO3-xBiFeO3, as it previously observed in (1-x)SrTiO3-xBaTiO3 (E. Dul'kin, J. Zhai, M. Roth, Phys. Status Solidi B 252, 2079 (2015)). Based on the data of the threshold fields the mechanisms of arising of random electric fields are discussed and their strengths are compared in both these relaxor ferroelectrics.
UR - http://www.scopus.com/inward/record.url?scp=85096295044&partnerID=8YFLogxK
U2 - 10.1051/epjap/2020200075
DO - 10.1051/epjap/2020200075
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AN - SCOPUS:85096295044
SN - 1286-0042
VL - 92
JO - EPJ Applied Physics
JF - EPJ Applied Physics
IS - 2
M1 - ap200075
ER -