Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

Daniel Abou-Ras; Sebastian S. Schmidt; Norbert Schäfer; Jaison Kavalakkatt; Thorsten Rissom; Thomas Unold; Roland Mainz; Alfons Weber; Thomas Kirchartz; Ekin Simsek Sanli; Peter A. van Aken; Quentin M. Ramasse; Hans Joachim Kleebe; Doron Azulay; Isaac Balberg; Oded Millo; Oana Cojocaru-Mirédin; Daniel Barragan-Yani; Karsten Albe; Jakob Haarstrich; Carsten Ronning

doi:10.1002/pssr.201510440

Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells - a review

Daniel Abou-Ras^*, Sebastian S. Schmidt, Norbert Schäfer, Jaison Kavalakkatt, Thorsten Rissom, Thomas Unold, Roland Mainz, Alfons Weber, Thomas Kirchartz, Ekin Simsek Sanli, Peter A. van Aken, Quentin M. Ramasse, Hans Joachim Kleebe, Doron Azulay, Isaac Balberg, Oded Millo, Oana Cojocaru-Mirédin, Daniel Barragan-Yani, Karsten Albe, Jakob HaarstrichCarsten Ronning

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Article › peer-review

49 Scopus citations

Abstract

The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)₂ thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)₂ thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices.

Original language	English
Pages (from-to)	363-375
Number of pages	13
Journal	Physica Status Solidi - Rapid Research Letters
Volume	10
Issue number	5
DOIs	https://doi.org/10.1002/pssr.201510440
State	Published - 1 May 2016

Bibliographical note

Publisher Copyright:
© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Keywords

Cu(In,Ga)Se
Dislocations
Grain boundaries
Stacking faults
Twin boundaries

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pssr.201510440

Cite this

Abou-Ras, D., Schmidt, S. S., Schäfer, N., Kavalakkatt, J., Rissom, T., Unold, T., Mainz, R., Weber, A., Kirchartz, T., Simsek Sanli, E., van Aken, P. A., Ramasse, Q. M., Kleebe, H. J., Azulay, D., Balberg, I., Millo, O., Cojocaru-Mirédin, O., Barragan-Yani, D., Albe, K., ... Ronning, C. (2016). Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells - a review. Physica Status Solidi - Rapid Research Letters, 10(5), 363-375. https://doi.org/10.1002/pssr.201510440

@article{ff965959813940539963b18d0bb4e7c4,

title = "Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review",

abstract = "The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices.",

keywords = "Cu(In,Ga)Se, Dislocations, Grain boundaries, Stacking faults, Twin boundaries",

author = "Daniel Abou-Ras and Schmidt, {Sebastian S.} and Norbert Sch{\"a}fer and Jaison Kavalakkatt and Thorsten Rissom and Thomas Unold and Roland Mainz and Alfons Weber and Thomas Kirchartz and {Simsek Sanli}, Ekin and {van Aken}, {Peter A.} and Ramasse, {Quentin M.} and Kleebe, {Hans Joachim} and Doron Azulay and Isaac Balberg and Oded Millo and Oana Cojocaru-Mir{\'e}din and Daniel Barragan-Yani and Karsten Albe and Jakob Haarstrich and Carsten Ronning",

note = "Publisher Copyright: {\textcopyright} 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.",

year = "2016",

month = may,

day = "1",

doi = "10.1002/pssr.201510440",

language = "אנגלית",

volume = "10",

pages = "363--375",

journal = "Physica Status Solidi - Rapid Research Letters",

issn = "1862-6254",

publisher = "Wiley-VCH Verlag",

number = "5",

}

Abou-Ras, D, Schmidt, SS, Schäfer, N, Kavalakkatt, J, Rissom, T, Unold, T, Mainz, R, Weber, A, Kirchartz, T, Simsek Sanli, E, van Aken, PA, Ramasse, QM, Kleebe, HJ, Azulay, D, Balberg, I, Millo, O, Cojocaru-Mirédin, O, Barragan-Yani, D, Albe, K, Haarstrich, J & Ronning, C 2016, 'Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se₂ thin films for solar cells - a review', Physica Status Solidi - Rapid Research Letters, vol. 10, no. 5, pp. 363-375. https://doi.org/10.1002/pssr.201510440

TY - JOUR

T1 - Compositional and electrical properties of line and planar defects in Cu(In,Ga)Se2 thin films for solar cells - a review

AU - Abou-Ras, Daniel

AU - Schmidt, Sebastian S.

AU - Schäfer, Norbert

AU - Kavalakkatt, Jaison

AU - Rissom, Thorsten

AU - Unold, Thomas

AU - Mainz, Roland

AU - Weber, Alfons

AU - Kirchartz, Thomas

AU - Simsek Sanli, Ekin

AU - van Aken, Peter A.

AU - Ramasse, Quentin M.

AU - Kleebe, Hans Joachim

AU - Azulay, Doron

AU - Balberg, Isaac

AU - Millo, Oded

AU - Cojocaru-Mirédin, Oana

AU - Barragan-Yani, Daniel

AU - Albe, Karsten

AU - Haarstrich, Jakob

AU - Ronning, Carsten

PY - 2016/5/1

Y1 - 2016/5/1

N2 - The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices.

AB - The present review gives an overview of the various reports on properties of line and planar defects in Cu(In,Ga)(S,Se)2 thin films for high-efficiency solar cells. We report results from various analysis techniques applied to characterize these defects at different length scales, which allow for drawing a consistent picture on structural and electronic defect properties. A key finding is atomic reconstruction detected at line and planar defects, which may be one mechanism to reduce excess charge densities and to relax deep-defect states from midgap to shallow energy levels. On the other hand, nonradiative Shockley-Read-Hall recombination is still enhanced with respect to defect-free grain interiors, which is correlated with substantial reduction of luminescence intensities. Comparison of the microscopic electrical properties of planar defects in Cu(In,Ga)(S,Se)2 thin films with two-dimensional device simulations suggest that these defects are one origin of the reduced open-circuit voltage of the photovoltaic devices.

KW - Cu(In,Ga)Se

KW - Dislocations

KW - Grain boundaries

KW - Stacking faults

KW - Twin boundaries

UR - http://www.scopus.com/inward/record.url?scp=84959505336&partnerID=8YFLogxK

U2 - 10.1002/pssr.201510440

DO - 10.1002/pssr.201510440

M3 - ???researchoutput.researchoutputtypes.contributiontojournal.article???

AN - SCOPUS:84959505336

SN - 1862-6254

VL - 10

SP - 363

EP - 375

JO - Physica Status Solidi - Rapid Research Letters

JF - Physica Status Solidi - Rapid Research Letters

IS - 5

ER -