Concentration and ion-energy-independent annealing kinetics during ion-implanted-defect annealing

R. Karmouch*, J. F. Mercure, Y. Anahory, F. Schiettekatte

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Scopus citations

Abstract

Nanocalorimetry revealed that the annealing kinetics of ion-implanted defects in polycrystalline Si is independent of ion fluence and implantation energy. Ion implantation of 30 keV Si-, 15 keV Si-, and 15 keV C- was performed at fluences ranging from 6× 1011 to 1× 1015 atoms cm2, followed by temperature scans between 30 and 450 °C. The rate of heat release has the same shape for all fluences, featuring no peaks but rather a smooth, continuously increasing signal. This suggests that the heat release is dominated by the annealing of highly disordered zones generated by each implantation cascade. Such annealing depends primarily on the details of the damage zone-crystal interface kinetics, and not on the point defect concentration.

Original languageAmerican English
Article number031912
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number3
DOIs
StatePublished - 17 Jan 2005
Externally publishedYes

Bibliographical note

Funding Information:
The authors are grateful to S. Roorda, R. Poirier, M. Chicoine, L. H. Allen, and M. Yu. Efremov for fruitful discussions. Thanks also go to L. Godbout and R. Gosselin for their technical assistance, Y. Q. Wang for TEM, M. Skvarla and P. Infante of the Cornell Nanofabrication Facility, as well as O. Grenier and S. Bah of the École Polytechnique de Montréal for their assistance with nanocalorimeters fabrication. This work benefited from the support of NanoQuébec, FQRNT, and NSERC.

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