Correlating structure, strain, and morphology of self-assembled InAs quantum dots on GaAs

D. P. Kumah, J. H. Wu, N. S. Husseini, V. D. Dasika, R. S. Goldman, Y. Yacoby, R. Clarke

Research output: Contribution to journalArticlepeer-review

9 Scopus citations

Abstract

We report on the use of a direct x-ray phase retrieval method, coherent Bragg rod analysis, to characterize self-assembled InAs quantum dots (QDs) grown epitaxially on GaAs substrates. Electron density maps obtained close to the x-ray absorption edges of the constituent elements are compared to deconvolute composition and atomic spacing information. Our measurements show no evidence of a wetting layer and reveal bowing of the atomic layers throughout the QD, extending from the QD-substrate interface. This leads to a half-layer stacking shift which may act to partially decouple the QDs electronically from the substrate.

Original languageEnglish
Article number021903
JournalApplied Physics Letters
Volume98
Issue number2
DOIs
StatePublished - 10 Jan 2011

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