CRITICAL BEHAVIOR OF THE ELECTRONIC PROPERTIES OF MAGNETIC SEMICONDUCTORS - I. THEORY.

I. Balberg

CRITICAL BEHAVIOR OF THE ELECTRONIC PROPERTIES OF MAGNETIC SEMICONDUCTORS - I. THEORY.

I. Balberg^*

^*Corresponding author for this work

Racah Institute of Physics

Research output: Contribution to journal › Conference article › peer-review

Abstract

The temperature dependence of the transport and optical properties close to critical temperature is considered. A review of the recent theories of this critical behavior is given for both the weak (s-d) and the strong (d-d) interaction limits. Recent high precision measurements of the critical behavior of the resistivity and the optical absorption edge in various ferromagnetic and antiferromagnetic semiconductors confirm the predictions made.

Original language	English
Pages (from-to)	c5. 75-c5. 86
Journal	Journal de physique. Colloque
Volume	41 Colloq C5
Issue number	6
State	Published - 1979
Event	Colloq Int du CNRS sur les Semicond Magn - Montpellier, Fr Duration: 10 Sep 1979 → 13 Sep 1979

Cite this

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title = "CRITICAL BEHAVIOR OF THE ELECTRONIC PROPERTIES OF MAGNETIC SEMICONDUCTORS - I. THEORY.",

abstract = "The temperature dependence of the transport and optical properties close to critical temperature is considered. A review of the recent theories of this critical behavior is given for both the weak (s-d) and the strong (d-d) interaction limits. Recent high precision measurements of the critical behavior of the resistivity and the optical absorption edge in various ferromagnetic and antiferromagnetic semiconductors confirm the predictions made.",

author = "I. Balberg",

year = "1979",

language = "אנגלית",

volume = "41 Colloq C5",

pages = "c5. 75--c5. 86",

journal = "Journal de physique. Colloque",

issn = "0449-1947",

publisher = "Springer Verlag",

number = "6",

note = "Colloq Int du CNRS sur les Semicond Magn ; Conference date: 10-09-1979 Through 13-09-1979",

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AB - The temperature dependence of the transport and optical properties close to critical temperature is considered. A review of the recent theories of this critical behavior is given for both the weak (s-d) and the strong (d-d) interaction limits. Recent high precision measurements of the critical behavior of the resistivity and the optical absorption edge in various ferromagnetic and antiferromagnetic semiconductors confirm the predictions made.

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SP - c5. 75-c5. 86

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JF - Journal de physique. Colloque

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T2 - Colloq Int du CNRS sur les Semicond Magn

Y2 - 10 September 1979 through 13 September 1979

ER -

CRITICAL BEHAVIOR OF THE ELECTRONIC PROPERTIES OF MAGNETIC SEMICONDUCTORS - I. THEORY.

Abstract

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